Tuning the single optical mode spontaneous emission coupling of a quantum dot in a micropost cavitySOLOMON, G. S; PELTON, M; YAMAMOTO, Y et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 737-741, issn 0022-0248, 5 p.Conference Paper

Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxySAKAKI, Hiroyuki.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 9-16, issn 0022-0248, 8 p.Conference Paper

Shape evolution of low density InAs quantum dots in the partial capping process by using As2 sourceOHKOUCHI, Shunsuke; KUMAGAI, Naoto; WATANABE, Katsuyuki et al.Journal of crystal growth. 2013, Vol 378, pp 549-552, issn 0022-0248, 4 p.Conference Paper

New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength rangeOHKOUCHI, S; KUMAGAI, N; SHIRANE, M et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 250-253, issn 0022-0248, 4 p.Conference Paper

Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3 μmKREBS, R; DEUBERT, S; REITHMAIER, J. P et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 742-747, issn 0022-0248, 6 p.Conference Paper

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Green photoluminescence of single InP-quantum dots grown on Al_0.66Ga_0.33InP/AlInP distributed Bragg reflectorsROSSBACH, R; SCHULZ, W. M; JETTER, M et al.Journal of crystal growth. 2007, Vol 298, pp 599-602, issn 0022-0248, 4 p.Conference Paper

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Investigation of CdSe quantum dots in MgS barriers as active region in light emitting diodesGUST, A; KRUSE, C; HOMMEL, D et al.Journal of crystal growth. 2007, Vol 301-302, pp 789-792, issn 0022-0248, 4 p.Conference Paper

High-temperature growth of Mn-irradiated InAs quantum dotsNAGAHARA, Seiji; TSUKAMOTO, Shiro; ARAKAWA, Yasuhiko et al.Journal of crystal growth. 2007, Vol 301-302, pp 797-800, issn 0022-0248, 4 p.Conference Paper

Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μmGONG, Z; FANG, Z. D; MIAO, Z. H et al.Journal of crystal growth. 2005, Vol 274, Num 1-2, pp 78-84, issn 0022-0248, 7 p.Article

Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layerROTELLA, P; RAGHAVAN, S; STINTZ, A et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 787-793, issn 0022-0248, 7 p.Conference Paper

InGaAs quantum dots embedded in DBR-coupled double cavityTZENG, T. E; CHUANG, K. Y; LIU, Y. C et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 259-262, issn 0022-0248, 4 p.Conference Paper

Lasing in compact microdisks with InAs quantum dots in a well structureHSING, J. Y; TZENG, T. E; CHUANG, K. Y et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 457-459, issn 0022-0248, 3 p.Conference Paper

Real time extraction of quantum dot size from RHEED intensity profilesRAJAPAKSHA, C; FREUNDLICH, A.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1758-1760, issn 0022-0248, 3 p.Conference Paper

Substrate manipulation by insertion of a thin and strained 2d layer: effect on Ge/Si growthSIMON, L; LOUIS, P; PIRRI, C et al.Journal of crystal growth. 2003, Vol 256, Num 1-2, pp 1-6, issn 0022-0248, 6 p.Article

Single step synthesis of CdSeS nanorods with chemical composition gradientsYU ZOU; DONGSHENG LI; YANG, Deren et al.Journal of crystal growth. 2010, Vol 312, Num 22, pp 3406-3409, issn 0022-0248, 4 p.Article

A nucleation study of group III-nitride multifunctional nanostructuresGUPTA, Shalini; HUN KANG; STRASSBURG, Martin et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 596-600, issn 0022-0248, 5 p.Conference Paper

Regrowth dynamics of InAs quantum dots on the GaAs circular mesaZHIGANG XIE; FANG WEI; HUI CAO et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 342-345, issn 0022-0248, 4 p.Conference Paper

Fabrication of ultra-low density and long-wavelength emission InAs quantum dotsSHESONG HUANG; ZHICHUAN NIU; HAIQIAO NI et al.Journal of crystal growth. 2007, Vol 301-302, pp 751-754, issn 0022-0248, 4 p.Conference Paper

Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arraysDING, G. Q; SHEN, W. Z; ZHENG, M. J et al.Journal of crystal growth. 2005, Vol 283, Num 3-4, pp 339-345, issn 0022-0248, 7 p.Article

Ordered InAs quantum dots on pre-patterned GaAs (001) by local oxidation nanolithographyMARTIN-SANCHEZ, J; GONZALEZ, Y; GONZALEZ, L et al.Journal of crystal growth. 2005, Vol 284, Num 3-4, pp 313-318, issn 0022-0248, 6 p.Article

Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescenceHAO WANG; JIAYUE YUAN; VAN VELDHOVEN, René P. J et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 570-571, issn 0022-0248, 2 p.Conference Paper

Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islandsHAO WANG; GUCHENG ZENG; ZHIJUN SONG et al.Journal of crystal growth. 2005, Vol 279, Num 3-4, pp 241-247, issn 0022-0248, 7 p.Article

Selective growth of high quality InAs quantum dots in narrow regions using in situ maskOHKOUCHI, Shunsuke; NAKAMURA, Yusui; NAKAMURA, Hitoshi et al.Journal of crystal growth. 2006, Vol 293, Num 1, pp 57-61, issn 0022-0248, 5 p.Article